Program, abstracts and list of active members/7th Sagamore conference on charge, spin and momentum densities, Nikko, August 25-30, 1982Sagamore conference on charge, spin and momentum densities. 7. 1982, 122 p.Conference Proceedings

PROCEEDINGS: JSSF-2/2ND JAPANESE-SOVIET SYMPOSIUM ON FERROELECTRICITY, KYOTO, SEPTEMBER 6-11, 19801980; JSSF-2. JAPANESE-SOVIET SYMPOSIUM ON FERROELECTRICITY. 2/1980-09-06/KYOTO; JPN; TOKYO: PHYSICAL SOCIETY OF JAPAN; DA. 1980; 214 P.; 26 CM;[JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN; ISSN 0031-9015; DA. 1980; VOL. 49; SUPPLEMENT B]Conference Proceedings

Characterization of polished surfaces by MakyohKUGIMIYA, K.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 461-468, issn 0022-0248, 8 p.Conference Paper

Characterization of semiconductors by photoluminescence mapping at room temperatureTAJIMA, M.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 1-7, issn 0022-0248, 7 p.Conference Paper

Synchrotron X-ray topographic studies on minute strain fields in as-grown silicon single crystalsISHIKAWA, T.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 131-140, issn 0022-0248, 10 p.Conference Paper

Makyoh : the 2000 year old technology still aliveKUGIMIYA, K.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 420-422, issn 0022-0248Conference Paper

A quantitative light scattering tomography technique for measuring microprecipitate concentrations in GaAs and InPFAWCETT, T. J; BROZEL, M. R.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 78-84, issn 0022-0248, 7 p.Conference Paper

Investigations of oxygen precipitates in Czochralski silicon wafers by using infrared tomographyFILLARD, J. P.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 71-77, issn 0022-0248, 7 p.Conference Paper

Scanning deep level transient spectroscopy (SDLTS) investigations of deep level spatial distribution in implanted siliconKONONCHUK, O. V; YAKIMOV, E. B.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 287-290, issn 0022-0248, 4 p.Conference Paper

A classification scheme for visual defects arising in semiconductor wafer inspectionRAO, A. R; JAIN, R.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 398-406, issn 0022-0248Conference Paper

Mathematical morphology applied to integrated circuit inspectionVITRIA, J; VILLANUEVA, J. J.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 407-412, issn 0022-0248Conference Paper

A study of defects in a AnS_xSe_1-x crystal by Raman scattering tomographySAKAI, K; SAWAHATA, K; OGAWA, T et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 61-64, issn 0022-0248, 4 p.Conference Paper

DLTS and photoluminescence on-wafer mapping analysis for AlGaAs/GaAs heterojunction bipolar transistorsWATANABE, K; WADA, K.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 330-334, issn 0022-0248, 5 p.Conference Paper

A three-dimensional study of dislocation lines in an In-doped GaAs crystal by layer-by-layer tomographyTODOROKI, S; SAKAI, K; OGAWA, T et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 116-119, issn 0022-0248, 4 p.Conference Paper

Combined use of EBIC and DSL photoetching for the quantitative assessment of defect properties in LEC GaAsFRIGERI, C; WEYHER, J. L.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 268-274, issn 0022-0248, 7 p.Conference Paper

Round-robin test of EPD measurement on undoped GaAs wafersIWASAKI, K; IMAI, M; NAKAMURA, A et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 257-267, issn 0022-0248, 11 p.Conference Paper

X-ray scattering radiography and orientation topography for characterization of semiconductor crystalsCHIKAURA, Y; KII, H; SUZUKI, Y et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 344-349, issn 0022-0248, 6 p.Conference Paper

Models and algorithms of image processing of local SEM diagnosticsUSHAKOV, N. G.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 413-419, issn 0022-0248Conference Paper

Anti-phase boundaries of GaAs on SiITOH, Y; MORI, H; YAMAGUCHI, M et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 363-366, issn 0022-0248, 4 p.Conference Paper

Characterization of growth cells in In-doped GaP crystals by birefringent methodHSU, J. T; HUANG, T. S.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 251-256, issn 0022-0248, 6 p.Conference Paper

Investigation of neutron radiation defects in silicon by high discriminability deep level transient spectroscopy (HDDLTS)FENGMEI, W; SHI YI; WANG CHANGHE et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 282-286, issn 0022-0248, 5 p.Conference Paper

Crystallization of biological macromoleculesMIKI, K; ATAKA, M; FUKUYAMA, K et al.Journal of crystal growth. 1996, Vol 168, Num 1-4, issn 0022-0248, 335 p.Conference Proceedings

High resolution X-ray diffraction studies of semiconductor superlatticesBARNETT, S. J.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 335-343, issn 0022-0248, 9 p.Conference Paper

Mapping evaluation of damage effect on electrical properties of GaAs Schottky contactsSHIOJIMA, K; OKUMURA, T.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 234-242, issn 0022-0248, 9 p.Conference Paper

Surface characterization of semi-insulting GaAs wafers by room temperature photoluminescence mappingTOBA, R; TAJIMA, M.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 28-37, issn 0022-0248, 10 p.Conference Paper